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RSD140P06 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Pch MOSFET
Data Sheet
4V Drive Pch MOSFET
RSD140P06
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
 Application
Switching
 Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
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 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD140P06
Taping
TL
2500
○
 Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
V
VGSS
20
V
ID
14
A
IDP *1
28
A
IS
14
A
ISP *1
28
A
PD *2
20
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw≤10s, Duty cycle≤1%
*2 Tc=25C
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
 Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
6.25
Unit
C / W
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2011.08 - Rev.A