RSD131P10 Datasheet, PDF (1/13 Pages) Rohm – Pch 100V 13A Power MOSFET

RSD131P10
Pch 100V 13A Power MOSFET
RSD131P10
Datasheet
V_DSS
R_DS(on) (Max.)
I_D
P_D
-100V
200mW
-13A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
T_c = 25°C
T_a = 25°C ^*4
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
lInner circuit
(3)
(1) Gate
(2) Drain
(3) Source
*1
(1)
*2
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(2)
Taping
330
16
2,500
TL
131P10
Symbol
Value
Unit
V_DSS
-100
V
I_D ^*1
13
A
I_D ^*1
7.0
A
I_D,pulse ^*2
52
A
V_GSS
20
V
E_AS ^*3
11.9
mJ
I_AR ^*3
-13
A
P_D
20
W
P_D
0.85
W
T_j
150
°C
T_stg
-55 to +150
°C
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2012.08 - Rev.A