RSD100N10FRA Datasheet, PDF (1/10 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSD100N10FRA
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) 4V drive.
3) High power package.
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSSDD110000NN101F0RA
Taping
TL
2500

Data Sheet
AEC-Q101 Qualified
 Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
0.65
(1)
(2)
(3) 2.3
0.5
1.0
 Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
100
V
V_GSS
20
V
I_D ^*3
10
A
I_DP ^*1
20
A
I_S *3
10
A
I_SP ^*1
20
A
P_D ^*2
20
W
Tch
150
C
Tstg 55 to 150 C
*1 P_W10s, Duty cycle1%
*2 T_C=25°C
*3 Please use within the range of SOA.
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol
Limits
Rth (ch-c)^* 6.25
Unit
C / W
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2011.06 - Rev.A