RSD080P05FRA Datasheet, PDF (1/10 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRSSDD008800PP0055FRA
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
 Application
Switching
Data Sheet
AEC-Q101 Qualified
 Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
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 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RRSSDD008800PP050F5RA
Taping
TL
2500
○
 Inner circuit
∗1
∗2
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
V_DSS
45
V
V_GSS
20
V
I_D
8.0
A
I_DP ^*1
16
A
I_S
8.0
A
I_SP ^*1
16
A
P_D ^*2
15
W
Tch
150
C
Range of storage temperature
Tstg 55 to 150 C
*1 Pw≦10s, Duty cycle≦1%
*2 T_c=25C
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
 Thermal resistance
Parameter
Channel to Case
* T_c=25C
Symbol
R_{th (ch-c)} ^*
Limits
8.33
Unit
C / W
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2011.08 - Rev.A