RSD080N06FRA Datasheet, PDF (1/10 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RRSSDD008800NN0066FRA
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) 4V drive.
3) High power package(CPT3).
 Application
Switching
Data Sheet
AEC-Q101 Qualified
 Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
0.65
(1)
(2)
(3) 2.3
0.5
1.0
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSSDD008800NN060F6RA
Taping
TL
2500

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
60
V
V_GSS
20
V
I_D
8
A
I_DP ^*1
16
A
I_S
8
A
I_SP ^*1
16
A
P_D ^*2
15
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 T_C=25C
 Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
 Thermal resistance
Parameter
Channel to Case
* T_C=25C
Symbol
Rth (ch-c)^*
Limits
8.33
Unit
C / W
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2011.08 - Rev.A