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RSD080N06 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Data Sheet
4V Drive Nch MOSFET
RSD080N06
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) 4V drive.
3) High power package(CPT3).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD080N06
Taping
TL
2500
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
V
VGSS
ï±20
V
ID
ï±8
A
IDP *1
ï±16
A
IS
8
A
ISP *1
16
A
PD *2
15
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 TC=25ï°C
ï¬ Inner circuit
â1
â2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 ESD PROTECTION DIODE
ïª2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Case
* TC=25ï°C
Symbol
Rth (ch-c)*
Limits
8.33
Unit
ï°C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
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