RSD050N06TL Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Nch MOSFET

Data Sheet
4V Drive Nch MOSFET
RSD050N06
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
ýõü
üõø
ùõú
÷õü
÷õþü
÷õýü
÷õĀ ùõú
ïøð
ïùð
ïúð ùõú
÷õü
øõ÷
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
Absolute maximum ratings (T_a=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
60
V
V_GSS
20
V
I_D
5.0
A
I_DP ^*1
15
A
I_S
5.0
A
I_SP ^*1
15
A
P_D ^*2
15
W
T_ch
150
°C
T_stg 55 to +150 °C
*1 Pw10s, Duty cycle1%
*2 T_c=25°C
Inner circuit
∗1
(1) Gate
∗2
(2) Drain
(3) Source
*1 ESD Protection Diode
*2 Body Diode
(1)
(2)
(3)
Thermal resistance
Parameter
Channel to Case
* T_c=25C
Symbol
R_{th (ch-c)} ^*
Limits
8.33
Unit
°C / W
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2014.02 - Rev.B