RSB6.8CS Datasheet, PDF (1/3 Pages) Rohm – ESD Protection diode

Diodes
ESD Protection diode
RSB6.8CS
RSB6.8CS
zApplication
ESD Protection, bi direction
zFeatures
1) Ultra small mold type. (VMN2)
2) High reliability.
3) Bi chip-mounter, automatic mounting
is possible.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
0.6±0.05
0.16±0.05
0.55
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory) + day
zTaping specifications
4±0.1
2±0.05
φ1.55
VMN2
zStructure
0.2±0.05
φ0.5
0.7±0.05
2±0.05
4.0±0.1
0.52
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak pulse power (tp=10×1000us)
Ppk
10
W
Power dissipation
P
100
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
Operating temperature
Topor
-55 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage
Reverse current
Capacitance between terminals
V_z
5.78
- 7.82
I_R
-
-
0.5
Ct
-
15
-
Unit
Conditions
V
I_Z=1mA
µA
V_R=3.5V
pF
V_R=0V , f=1MHz
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