RSB12Z Datasheet, PDF (1/3 Pages) Rohm – Low Capacitance Protection Device

Diodes
RSB12Z
Low Capacitance Protection Device
RSB12Z
zApplication
ESD Protection
zFeatures
1) Ultra small mold type. (VMD3)
2) Low capacitance
3) Bi direction
zConstruction
Silicon Epitaxial Planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
0.4
1.2±0.1
0.32±0.05
(3)
0.22±0.05
(1)
(2)
0.22±0.05
0.4
0.4
0.13±0.05
0～0.1
0.5±0.05
0.4
0.5
0.8
VMD3
zStructure
ROHM : VMD3
dot(year week factory)
zTaping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
0.3±0.1
1.3±0.05
　　　 0
(4.0±0.1)
2.0±0.05
φ0.5±0.05
0.6±0.05
0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
P
150
mW
Tj
150
℃
Tstg
-55 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol Min.
V_Z
9.6
I_R
-
C_t
-
Typ. Max.
- 14.4
- 0.10
1
-
Unit
Conditions
V
I_Z=5mA
µA
V_R=9V
pF
f=1MHz,V_R=0V
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