RSB12JS2 Datasheet, PDF (1/4 Pages) Rohm – Bi Direction ESD Protection Diode

Diodes
RSB12JS2
Bi Direction ESD Protection Diode
(Silicon Epitaxial Planer)
RSB12JS2
zApplication
ESD Protection
zFeatures
1) Low capacitance
2) Bi direction
3) Ultra small mold type (EMD6)
zAbsolute maximum ratings (Ta=25°C)
Power dissipation
Junction temperature
Storage temperature
Pd
150 mW/Total
Tj
150 °C
Tstg
−55 to 150 °C
zElectrical characteristics (Ta=25°C) (∗Rating of per diode)
Characteristic
Symbol
Test Condition
Zener Voltage
Vz
Iz=
Reverse current
IR
VR=
Junction capacitance
Ct
　f=
VR=
∗ Please pay attention to static electricity when handling.
∗ Zener voltage (Vz) shall be measured at 40ms after loading current.
5 mA
9V
1MHz
0V
Standard
MIN.
MAX.
9.6 V
14.4 V
-
0.1µA
1 pF
TYP.
1/3