RRR040P03TL Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRR040P03
 Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Space saving small surface mount package (TSMT3).
3) 4V drive.
 Application
Switching
 Dimensions (Unit : mm)
TSMT3
(3)
(1)
(2)
Abbreviated symbol : UG
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RRR040P03
Taping
TL
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
30
V
V_GSS
 20
V
I_D
4
A
I_DP ^*1
 16
A
I_S
0.8
A
I_SP ^*1
16
A
P_D ^*2
1.0
W
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)^* 125
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A