RRR030P03TL Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRR030P03
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance
2) Space saving-small surface mount package (TSMT3)
3) 4V drive
zApplications
Switching
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : UA
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRR030P03
Taping
TL
3000
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−30
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous
ID
±3
A
Pulsed
IDP ^∗1
±12
A
Source current
Continuous
IS
−0.8
A
(Body diode)
Pulsed
ISP ^∗1
−12
A
Total power dissipation
PD ^∗2
1.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
Unit
°C/W
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2009.04 - Rev.A