RRQ045P03 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRQ045P03
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) High speed switching.
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RRQ045P03
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
IS
ISP ^∗1
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Tch
Tstg
Limits
−30
±20
±4.5
±18
−1.0
−18
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : UB
zInner circuit
(6)
(5)
(4)
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
∗1
(1)Drain
(2)Drain
(3) ^(3)Gate
(4)Source
(5)Drain
(6)Drain
Unit
°C / W
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2009.06 - Rev.A