RRQ030P03 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRQ030P03
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) High speed switching.
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : UA
zApplications
Switching
zEquivalent circuit
(6)
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RRQ030P03
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−30
±20
±3
±12
−1
−12
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
100
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1)DRAIN
(2)DRAIN
(3)GATE
(3) _(4)SOURCE
(5)DRAIN
(6)DRAIN
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
○^c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A