RRL025P03 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRL025P03
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRL025P03
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
IS
ISP ^∗1
PD ^∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Limits
−30
±20
±2.5
±10
−0.8
−10
1
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : UA
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
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2009.06 - Rev.A