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RRH100P03 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
RRH100P03
ï¬Structure
Silicon P-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
ï¬Application
Switching
ï¬Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRH100P03
Taping
TB
2500
ï¬Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
â30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±10
A
Drain current
Pulsed
IDPâ1
±40
A
Source current
Continuous
Is
â1.6
A
(Body Diode)
Pulsed
Isp â1
â40
A
Power dissipation
PDâ2
2.0
W
Channel temperature
Range of storage temperature
â1 Pwâ¤10μs, Duty cycleâ¤1%
â2 Mounted on a ceramic board.
Tch
150
°C
Tstg
â55 to +150
°C
ï¬Thermal resistance
Parameter
Channel to Ambient
â Mounted on a ceramic board.
Symbol
Rth (ch-a)â
Limits
62.5
Unit
°C / W
ï¬Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
ï¬Inner circuit
(8)
(7)
(6)
(5)
â2
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.A
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