RRH050P03 Datasheet, PDF (1/6 Pages) Rohm – RRH050P03

4V Drive Pch MOSFET
RRH050P03
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRH050P03
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±5
A
Drain current
Pulsed
IDP^∗1
±20
A
Source current
Continuous
Is
−1.6
A
(Body Diode)
Pulsed
Isp ^∗1
−20
A
Power dissipation
PD^∗2
2.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Tstg
−55 to +150
°C
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8)
(7)
(6)
(5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)^∗
Limits
62.5
Unit
°C / W
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2010.02 - Rev.A