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| RRF015P03 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
RRF015P03
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : UJ
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RRF015P03
Taping
TL
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï30
V
VGSS
ï±20
V
ID
ï±1.5
A
IDP *1
ï±6
A
IS
ï0.6
A
ISP *1
ï6
A
PD *2
0.8
W
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(3)
(1)
(1) Gate
(2) Source
(3) Drain
â2
â1
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
ï°C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.08 - Rev.A
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