RQ7E110AJ Datasheet, PDF (1/14 Pages) Rohm – Nch 30V 11A Middle Power MOSFET

RQ7E110AJ
　　Nch 30V 11A Middle Power MOSFET
V_DSS
R_DS(on)(Max.)
I_D
P_D
30V
9.0mΩ
±11A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
　
　　　　　　
lInner circuit
　　 ^Datasheet
　
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
HR
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
V_DSS
I_D
I_DP*1
V_GSS
I_AS*2
E_AS*2
P_D*3
P_D*4
T_j
T_stg
30
V
±11
A
±44
A
±12
V
11
A
18
mJ
1.5
W
1.1
W
150
℃
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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20160515 - Rev.001 ^{　 　}