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RQ5E040AJ Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 4A Middle Power MOSFET
RQ5E040AJ
  Nch 30V 4A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
37mΩ
±4.0A
1W
lFeatures
1) Low on - resistance.
2) High Power Package (TSMT3).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT3
(SC-96)
      
lInner circuit
   Datasheet
      
 
 
 
      
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCL
FK
Symbol
Value
Unit
VDSS
30
V
ID
±4.0
A
ID,pulse*1
±16
A
VGSS
±12
V
EAS*2
1.2
mJ
IAS*2
4.0
A
PD*3
1
W
Tj
150
℃
Tstg
-55 to +150
℃
                                                                                        
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