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RQ5E035BN Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 3.5A Power MOSFET
RQ5E035BN
  Nch 30V 3.5A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
37mΩ
±3.5A
1W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCL
ZS
Symbol
Value
Unit
VDSS
30
V
ID*1
±3.5
A
ID,pulse*2
±12
A
VGSS
±20
V
EAS*3
1.9
mJ
IAS*3
3.5
A
PD*4
1
W
Tj
150
℃
Tstg
-55 to +150
℃
                                                                                        
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