RQ3E180AJ Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 18A Middle Power MOSFET

RQ3E180AJ
　　Nch 30V 18A Middle Power MOSFET
V_DSS
R_DS(on)(Max.)
I_D
P_D
30V
4.5mΩ
±18A
2W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
　
　
　　　　　　
lInner circuit
　　 ^Datasheet
　　　　　　
　
　
　
　　　　　　
lApplication
Switching
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
T_a = 25°C
T_c = 25°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
3000
TB
E180AJ
Symbol
Value
Unit
V_DSS
30
V
I_D
±18
A
I_D*4
±30
A
I_D,pulse*1
±72
A
V_GSS
±12
V
E_AS*2
24.6
mJ
I_AS*2
18
A
P_D*3
2
W
P_D*4
30
W
T_j
150
℃
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141215 - Rev.002 ^{　 　}