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RQ3E150BN Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 15A Middle Power MOSFET
RQ3E150BN
  Nch 30V 15A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
5.3mΩ
±15A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E150BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
30
V
ID
±15
A
ID,pulse*1
±60
A
VGSS
±20
V
PD*2
2
W
Tj
150
℃
Tstg
-55 to +150
℃
                                              
                                                                                        
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