RQ3E110AJ Datasheet, PDF (1/14 Pages) Rohm – Nch 30V 24A Middle Power MOSFET

RQ3E110AJ
　　Nch 30V 24A Middle Power MOSFET
V_DSS
R_DS(on)(Max.)
I_D
P_D
30V
11.7mΩ
±24A
15W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
lOutline
HSMT8
　
　　　　　　
lInner circuit
　　 ^Datasheet
　
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
E110AJ
Parameter
Symbol
Value
Unit
Drain - Source voltage
V_DSS
30
V
Continuous drain current
T_c = 25°C
I_D*1
T_a = 25°C
I_D
±24
A
±11
A
Pulsed drain current
I_DP*2
±44
A
Gate - Source voltage
V_GSS
±12
V
Avalanche current, single pulse
I_AS*3
11
A
Avalanche energy, single pulse
E_AS*3
4.5
mJ
Power dissipation
P_D*1
15
W
P_D*4
2.0
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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