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RQ3E080BN Datasheet, PDF (1/12 Pages) Rohm – Nch 30V 8A Middle Power MOSFET | |||
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RQ3E080BN
ããNch 30V 8A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
15.2mΩ
±8A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
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lInner circuit
ãã Datasheet
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lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E080BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
30
V
ID
±8
A
ID,pulse*1
±32
A
VGSS
±20
V
PD*2
2
W
Tj
150
â
Tstg
-55 to +150
â
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20141107 - Rev.001 ã ã
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