RQ1E100XN Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET

Data Sheet
4V Drive Nch MOSFET
RQ1E100XN
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
 Application
Switching
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : XS
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RQ1E100XN
Taping
TR
3000
○
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
30
V
V_GSS ^*1
20
V
I_D ^*1
10
A
I_DP ^*1
36
A
I_S
1.25
A
I_SP ^*1
36
A
P_D ^*2
1.5
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
83.3
Unit
C / W
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2011.04 - Rev.A