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RQ1E070RPTR Datasheet, PDF (1/12 Pages) Rohm – Pch -30V -7A Power MOSFET
RQ1E070RP
Pch -30V -7A Power MOSFET
RQ1E070RP
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-30V
17mW
-7A
1.5W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT8
(8)
(7)
(6)
(5)
(1)
(2)(3)
(4)
lInner circuit
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
UE
Symbol
Value
Unit
VDSS
-30
V
ID *1
7
A
ID,pulse *2
28
A
VGSS
20
V
PD *3
1.5
W
PD *4
0.55
W
Tj
150
°C
Tstg
-55 to +150
°C
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2012.11 - Rev.C