RQ1E050RP Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RQ1E050RP
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
(1) (2) (3) (4)
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RQ1E050RP
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
Abbreviated symbol :UD
Taping
TR
3000
○
 Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Symbol
Limits
Unit
V_DSS
30
V
V_GSS *1
20
V
I_D
5
A
I_DP
20
A
I_S
1
A
I_SP ^*1
20
A
P_D ^*2
1.5
W
Tch
150
C
Tstg
55 ~ +150
C
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
83.3
Unit
C / W
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2010.07 - Rev.A