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RQ1C065UN Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Nch MOSFET | |||
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1.5V Drive Nch MOSFET
RQ1C065UN
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(1.5V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : VB
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RQ1C065UN
Taping
TR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
20
V
VGSS
ï±10
V
ID
ï±6.5
A
IDP *1
ï±26
A
IS
1
A
ISP *1
26
A
PD *2
1.5
W
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a CERAMIC Board.
ï¬ Inner circuit
(8) (7) (6) (5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
â2
â1
(1) (2) (3) (4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a CERAMIC Board.
Symbol
Rth (ch-a)*
Limits
83.3
Unit
ï°C / W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.A
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