RQ1A070ZP Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RQ1A070ZP
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RQ1A070ZP
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−12
V
Gate-source voltage
VGSS
±10
V
Drain current
Continuous
ID
±7
A
Pulsed
IDP ^∗1
±28
A
Source current
Continuous
IS
−1
A
(Body diode)
Pulsed
ISP ^∗1
−28
A
Total power dissipation
PD ^∗2
1.5
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
83.3
Unit
°C/W
zDimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : YJ Each lead has same dimensions
zInner circuit
(8)
(7)
(6)
(5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
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2009.08 - Rev.A