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RQ1A070AP Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch MOSFET | |||
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Data Sheet
1.5V Drive Pch MOSFET
RQ1A070AP
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Low voltage drive (1.5V drive).
3) Small surface mount package (TSMT8).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : SG
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RQ1A070AP
Taping
TR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï12
V
VGSS
0 toï ï8
V
ID
ï±7
A
IDP *1
ï±28
A
IS
ï1
A
ISP *1
ï28
A
PD *2
1.5
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
â2
â1
(1)
(2)
(3)
(4)
ïª1 ESD PROTECTION DIODE
ïª2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
Unit
ï°C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
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