RQ1A060ZP Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RQ1A060ZP
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT8
3.0
(8) (7) (6) (5)
0.8
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RQ1A060ZP
Taping
TR
3000
(1) (2) (3) (4)
0.65
0.32
0.17
Abbreviated symbol : YH Each lead has same dimensions
zEquivalent circuit
(8) (7) (6) (5)
∗2
∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Sorce
(2) Sorce
(3) Sorce
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−12
V
Gate-source voltage
VGSS
±10
V
Drain current
Continuous
ID
±6
A
Pulsed
IDP ^∗1
±24
A
Source current
(Body diode)
Continuous
IS
−1
A
Pulsed
ISP ^∗1
−24
A
Total power dissipation
PD ^∗2
1.5
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
83.3
Unit
°C / W
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2009.05 - Rev.A