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RP1E050RP Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
RP1E050RP
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
ï¬ Dimensions (Unit : mm)
MPT6
(6) (5) (4)
(1) (2) (3)
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E050RP
Taping
TR
1000
â
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï30
V
VGSS
ï±20
V
ID
ï±5
A
IDP *1
ï±20
A
IS
ï1.6
A
ISP *1
ï20
A
PD *2
2.0
W
Tch
150
ï°C
Tstg ï55 to +150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(6)
(5)
(4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
â2
â1
(1)
(2)
(3)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
62.5
Unit
ï°C / W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
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