RN779FT106 Datasheet, PDF (1/5 Pages) Rohm – PIN diode

Diodes
PIN diode
RN779F
RN779F
zApplications
For AGC, Switching.
zFeatures
1) Small mold type. (UMD3)
2) High-frequency resistance witch is small
and low capacity.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Ea_同ch_寸le_法ad has same dimension
(3)
0.15±0.05
zLand size figure (Unit : mm)
1.3
0.65
(2)
(1)
（0.65） （0.65）
1.3±0.1
0～0.1
0.7±0.1
0.9±0.1
0.8MIN.
UMD3
zStructure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
2.25±0.1
　　　　 0
4.0±0.1
φ0.5±0.05
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
50
V
Forward current (DC)
Junction temperature
I_F
50
mA
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1
Reverse current
I_R
-
-
0.1
Capacitance between terminals
Ct
-
-
0.9
High frequency resistance
Rf
-
-
7
Unit
Conditions
V
I_F=10mA
µA
V_R=50V
pF
V_R=35V , f=1MHz
Ω
I_F=10mA,f=100MHz
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