RN262G Datasheet, PDF (1/3 Pages) Rohm – PIN diode

Diodes
PIN diode
RN262G
RN262G
zApplications
High frequency switching
zExternal dimensions (Unit : mm)
0.6±0.05
0.13±0.03
zFeatures
1) Ultra small mold type. (VMD2)
2) Low high-frequency forward resistance / low
capacitance (CT).
zConstruction
Silicon epitaxial planar
0.27±0.03
0.5±0.05
ROHM : VMD2
dot (year week factory)
zTaping dimensions (Unit : mm)
4±0.1
2±0.05
φ1.5+0.1
　　　　　0
zLand size figure (Unit : mm)
0.5
VMD2
zStructure
0.18±0.05
0.76±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_F
Pd
Tj
Tstg
4±0.1
Limits
30
100
100
150
-55 to +150
2±0.05
φ0.5
Unit
V
mA
mA
℃
℃
0.3
0.65±0.05
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
-
1
I_R
-
-
0.1
Capacitance between terminals
Ct
-
-
0.4
High frequency resistance
Rf
-
-
2.8
-
-
1.5
Unit
Conditions
V
I_F=10mA
µA
V_R=30V
pF
V_R=1V , f=1MHz
Ω
I_F=3mA,f=100MHz
Ω
I_F=10mA,f=100MHz
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