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| RN142ZS8A Datasheet, PDF (1/3 Pages) Rohm – PIN Diode | |||
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Diodes
PIN Diode
RN142ZS8A
RN142ZS8A
z Applications
High frequency switching
z Dimensions (Unit : mm)
ãªãª
ãªã«§ãªãª
ãªãª
ãªãª
ãªã«§ãªãª
ãªãª
z Land size figure (Unit : mm)
ãªãª
ãª
z Features
1) Ultra small mold typeÍHMD8Í
2) Low high-frequency forward
resistance (rF)
/ low capacitance (CT).
z Construction
Silicon epitaxial planar
ãªã©·ãª
ãªãª
ãªãªã«§ãªãª
ãªãª
ãªãª
ãªã«§ãªãª
ãªãª
ãªä¾ãªãª
ãªãª
㪩㪦ãªãª¤ã©·ãªã©·ãªãª¤ãªãª
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㪡ãªãªãªãªã©·ãªã©·ãª
㪡ãªãª 㪫ãªã©·ãªã©·ã©·ãª
z Structure
㪻ã«ã«
ã©¿ã«ãª¼ãª¸ã«ã©·ã«ãª¼ãª¼ã«ã©·ãª½ãª¸ãªºã«ã«ã«ã«ãª
z Taping specifications (Unit : mm)
z Absolute maximum ratings (Ta=25qC)
Parameter
Symbol
Reverse voltage (DC)
VR
Forward current(DC)
IF
Junction temperature
Tj
Storage temperature
Tstg
z Electrical characteristic (Ta=25qC)
Parameter
Symbol Min.
Forward voltage
Reverse current
Capacitance between terminals
VF
-
IR
-
Ct
-
Forward resistance
Rf
-
Rf
-
Limits
30
50
150
-55 to +150
Typ. Max.
Unit
-
1.0
V
-
0.1
μA
- 0.45
pF
-
1.5
ã±
-
2.5
ã±
Unit
V
mA
ã·
ã·
Conditions
IF=10mA
VR=30V
VR=1.0V , f=1MHz
IF=10mA,f=100MHz
IF=3mA,f=100MHz
1/2
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