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RMW200N03 Datasheet, PDF (1/7 Pages) Rohm – 4.5V Drive Nch MOSFET | |||
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Data Sheet
4.5V Drive Nch MOSFET
RMW200N03
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
3) Low voltage drive(4.5V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
PSOP8
(8) (7) (6) (5)
1pin mark
(1) (2) (3) (4)
0.4
1.27 5.0
0~0.1
0.22
0.9
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RMW200N03
Taping
TB
2500
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
V
VGSS
ï±20
V
ID
ï±20
A
IDP *1
ï±80
A
IS
2.5
A
ISP *1
80
A
PD *2
3.0
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 MOUNTED ON 40mmÃ40mm Cu BOARD
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
â2
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
* MOUNTED ON 40mmÃ40mm Cu BOARD
Symbol
Rth (ch-a)*
Limits
41.7
Unit
ï°C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
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