RMW150N03 Datasheet, PDF (1/7 Pages) Rohm – 4.5V Drive Nch MOSFET

Data Sheet
4.5V Drive Nch MOSFET
RMW150N03
 Structure
Silicon N-channel MOSFET
Features
1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
3) Low voltage drive(4.5V drive).
 Application
Switching
 Dimensions (Unit : mm)
PSOP8
(8) (7) (6) (5)
1pin mark
(1) (2) (3) (4)
0.4
1.27 _5.0
0~0.1
0.22
0.9
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RMW150N03
Taping
TB
2500

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
30
V
V_GSS
20
V
I_D
15
A
I_DP ^*1
60
A
I_S
2.5
A
I_SP ^*1
60
A
P_D ^*2
3.0
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 MOUNTED ON 40mm×40mm Cu BOARD
 Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*2 MOUNTED ON 40mm×40mm Cu BOARD
Symbol
Rth (ch-a)^*
Limits
41.7
Unit
C / W
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2011.03 - Rev.A