RK7002A Datasheet, PDF (1/5 Pages) Rohm – Switching (60V, 300mA)

Transistors
Switching (60V, 300mA)
RK7002A
RK7002A
!Features
1) Low on-resistance.
2) High ESD
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
!Structure
Silicon N-channel
MOSFET transistor
!Equivalent circuit
(3)
!External dimensions (Units : mm)
1.3
2.4
Each lead has same dimensions
ROHM : SST3
EIAJ : SOT-23
Abbreviated symbol : RKS
(1) Source
(2) Gate
(3) Drain
(2)
∗Gate
Protection
Diode.
(1)
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
300
mA
Drain current
Pulsed
IDP^∗1
1.2
A
Continuous
IDR
300
mA
Drain reverse current
Pulsed
IDRP^∗1
1.2
A
Total power dissipation
PD^∗2
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When using 1×0.75×0.062 inch glass epoxy board.