RK4936 Datasheet, PDF (1/4 Pages) Rohm – Switching

Transistors
Switching (30V, 6A)
RK4936
RK4936
zFeatures
1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.
zStructure
Silicon N-channel
MOS FET
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
zExternal dimensions (Units : mm)
Max.1.75
(5)
(4)
(8)
(1)
36..90_{−+−+}00.1.35
0.15
1.5_−+0.1
0.5_−+0.1
ROHM : SOP8
Each lead has same dimensions
(1) (2) (3) (4)
∗
(1)
(2) (3)
∗^{Gate Protection Diode.}
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
∗
(4) Tr2 Gate
(5) Tr2 Drain
(4) _{(6) Tr2 Drain}
(7) Tr1 Drain
(8) Tr1 Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
6
A
Drain Current
Pulsed
IDP^∗
24
A
Reverse Drain
Continuous
IDR
6
A
Current
Pulsed
IDRP^∗
24
A
Source Current ^Continuous
Is
1.3
A
(Body Diode)
Pulsed
Isp^∗
5.2
A
Total Power Dissipation(Tc=25°C)
PD
2
W
Channel Temperature
Storage Temperature
∗Pw≤10µs, Duty cycle≤1%
Tch
150
°C
Tstg
−55~+150
°C