RK3055E_1 Datasheet, PDF (1/5 Pages) Rohm – 10V Drive Nch MOS FET

Transistors
10V Drive Nch MOS FET
RK3055E
RK3055E
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
RK3055E
Taping
TL
2500
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
(1)Gate
(2)Drain
(3)Source
0.75
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
Abbreviated symbol : 3055E
zInner circuit
(1) Gate
(1)
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
8
A
Drain current
Pulsed
IDP^∗
20
A
Reverse drain
Continuous
IDR
8
A
current
Pulsed
IDRP^∗
20
A
Total power dissipation (Tc=25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature
∗ Pw≤10µs, Duty cycle≤1%
Tstg
−55 to +150
°C
(2)
(3)
Rev.A
1/4