RJU003N03FRA Datasheet, PDF (1/7 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
RJU003N03FRA
AEC-Q101 Qualified
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000033NN0033FRA
Taping
T106
3000
zDimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : LP
zInner circuit
(3)
(2)
∗2
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±12
V
Drain current
Continuous
ID
±300
mA
Pulsed
IDP ^∗1
±1.2
A
Total power dissipation
PD ^∗2
200
mW
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
(1) Source
(2) Gate
(3) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
625
Unit
°C/W
www.rohm.com
○^c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.03 - Rev.A