RJU002N06FRA Datasheet, PDF (1/8 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
RRJJUU002N06FRA
AEC-Q101 Qualified
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRJJUU000022NN0066FRA
Taping
T106
3000
zDimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : ML
zInner circuit
(3)
(2)
∗2
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±12
V
Drain current
Continuous
ID
±200
mA
Pulsed
IDP ^∗1
±800
mA
Total power dissipation
PD ^∗2
200
mW
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
625
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
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2016.05 - Rev.B