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RJP020N06 Datasheet, PDF (1/3 Pages) Rohm – 2.5V Drive Nch MOS FET | |||
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Transistors
2.5V Drive Nch MOS FET
RJP020N06
RJP020N06
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RJP020N06
Taping
T100
1000
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Gate
(2)Drain
(3)Source
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : LS
zInner circuit
DRAIN
GATE
â2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
Total power dissipation
PD
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 When mounted on a 40+ 40+ 0.7mm ceramic board
Tch
Tstg
Limits
60
±12
±2.0
±8.0
2.0
8.0
500
2 â2
150
â55 to +150
â1
SOURCE
â1 ESD PROTECTION DIODE
â2 BODY DIODE
Unit
V
V
A
A
A
A
mW
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
â When mounted on a 40+ 40+ 0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5 â
Unit
°C/W
°C/W
1/2
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