RFX10TF6S Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFX10TF6S
Series
Ultra Fast Recovery
Dimensions (Unit : mm)
+0.3
-0.1
Applications
General rectification
RFX10
TF6S
+0.3
-0.1
+0.2
-0.1
Features
1)Single type.(TO-220)
2)High switching speed
3)Soft Recovery
Construction
Silicon epitaxial planer
(1)
(3)
+0.1
-0.05
Structure
(1)
(3)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty  0.5
600
V
Reverse voltage
Average rectified forward current
V_R
Direct voltage
600
V
Io
60Hz half sin wave, Resistance load, Tc=57C
10
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
100
A
Junction temperature
Tj
Storage temperature
Tstg
150
C
-55 to +150
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
I_F=10A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min.
Typ.
Max.
Unit
-
2
2.5
V
-
0.15
10
A
-
16
30
ns
-
-
3.5
C / W
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2010.02 - Rev.A