RFVS8TG6S_16 Datasheet, PDF (1/8 Pages) Rohm – RFVS8TG6S

Super Fast Recovery Diode
RFVS8TG6S
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
3.8±0.06
4.5±0.1
10.2±0.2
1.28±0.06
Structure
Application
General rectification
For PFC
(CCM : Continuous Current Mode)
RFVS8
TG6S
1
2
Cathode Anode
Features
1) Hyper fast recovery / Hard recovery type
2) Ultra low switching loss
1.4±0.2
2.6±0.1
3) High current overload capacity
Construction
Silicon epitaxial planar type
2.54±0.1
0.83±^0.06
5.08±0.1
0.10
0.6±0.1
ROHM : TO-220AC
1 : Manufacture year, week,day, package code
2 : Serial number
Absolute Maximum Ratings (T_a= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct reverse voltage
600
V
Average current
I_o
60Hz half sin wave , resistive load
8
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, one cycle, non-repetitive at T}j^=25°C
60
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=8A
T_j=25°C _1.6
T_j=125°C _-
Reverse current
I_R
V_R=600V
T_j=25°C _-
T_j=125°C _-
Reverse recovery time
Reverse recovery current
Reverse recovery charges
Forward recovery time
Forward recovery voltage
I_F=0.5A, I_R=1A, Irr=0.25×I_{R -}
trr
I_F=8A, V_R=400V, dI_F/dt=200A/s -
I_Rp
Qrr
I_F=8A, V_R=400V
dI_F/dt=200A/s
T_j=125°C
-
-
tfr
I_F=8A, dI_F/dt=100A/s,
-
V_Fp
V_FR=1.1xV_Fmax
-
Thermal resistance
R_th(j-a)
Junction to ambient
-
R_th(j-c)
Junction to case
-
Typ.
2.5
1.8
0.03
5
12
20
5.0
145
110
4.5
-
-
Max. Unit
3.0 V
-V
10 A
200 A
20 ns
40 ns
-A
- nC
- ns
-V
3.0 °C/W
1.8 °C/W
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2016.07 - Rev.B