RFV8BM6S Datasheet, PDF (1/9 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFV8BM6S
Data Sheet
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
lApplications
General rectification
1
For PFC
(CCM : Continuous Current Mode)
lFeatures
1) Hyper fast recovery
/ Hard recovery type
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping Dimensions (Unit : mm)
2) Ultra low switching loss
3) High current overload capacity
TO-252
lStructure
Cathode
Open Anode
lConstruction
Silicon epitaxial planar type
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Operating junction temperature
Storage temperature
Symbol
Conditions
Limits
Unit
V_RM
Duty≦0.5
600
V
V_R
Direct voltage
600
V
I_o
60Hz half sin wave , Resistive load T_c=50°C
8
A
I_FSM 60Hz half sin wave, Non-repetitive at T_j=25°C
100
A
T_j
-
150
°C
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery current
Reverse recovery charges
Forward recovery time
Forward recovery voltage
Thermal resistance
Symbol
V_F
I_R
trr
I_Rp
Qrr
tfr
V_Fp
R_th(j-a)
R_th(j-c)
Conditions
I_F=8A
T_j=25°C
T_j=125°C
V_R=600V
T_j=25°C
T_j=125°C
I_F=0.5A, I_R=1A, Irr=0.25×I_R
I_F=8A, V_R=400V, dI_F/dt=-200A/ms
I_F=8A,V_R=400V
dI_F/dt=-200A/ms
T_j=125°C
I_F=8A, dI_F/dt=-100A/ms,
V_FR=1.1×V_Fmax
Junction to ambient
Junction to case
Min. Typ. Max. Unit
1.6 2.3 2.8 V
- 1.55 -
V
- 0.03 10 mA
-
5 200 mA
-
15 25 ns
-
25 45 ns
-
5.5
-
A
-
150
-
nC
-
125
-
ns
-
4.5
-
V
-
-
12 °C / W
-
-
4.5 °C / W
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2016.03 - Rev.A