RFV5BM6SFH Datasheet, PDF (1/8 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFV5BM6SFH
Datasheet
Application
Standard Fast Recovery
Dimensions (Unit : mm)
(2)
AEC-Q101 Qualified
Land size figure (Unit : mm)
6.0
Application
General rectification
For PFC
(CCM : Continuous Current Mode)
1
(1)
(3)
Features
1) Hyper fast recovery
/ Hard recovery type
2) Ultra low switching loss
ROHM : TO-252
JEITA : SC-63
1 : Manufacture date
Taping Dimensions (Unit : mm)
3) High current overload capacity
1.6
1.6
TO-252
2.3 2.3
Structure
Cathode
Open Anode
Construction
Silicon epitaxial planar type
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct reverse voltage
600
V
Average current
I_o
60Hz half sin wave , resistive load T_c=75°C
5
A
Non-repetitive forward surge current I_FSM ^{60Hz half sin wave, non-repetitive at T}j^=25°C
60
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
Electrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=5A
T_j=25°C _{1.6 2.2 2.8 V}
T_j=125°C _{- 1.5 -}
V
Reverse current
I_R
V_R=600V
T_j=25°C _{- 0.03 10 A}
T_j=125°C _-
5 200 A
Reverse recovery time
Reverse recovery current
Reverse recovery charges
Forward recovery time
Forward recovery voltage
trr
I_F=0.5A, I_R=1A, Irr=0.25×I_R
-
I_F=5A, V_R=400V, dI_F/dt=200A/s -
12 20 ns
20 40 ns
I_Rp
Qrr
I_F=5A, V_R=400V
dI_F/dt=200A/s
T_j=125°C
-
-
4.5
130
-
-
A
nC
tfr
I_F=5A, dI_F/dt=50A/s,
- 145 - ns
V_Fp
V_FR=1.1xV_Fmax
- 3.6 - V
Thermal resistance
R_th(j-a)
R_th(j-c)
Junction to ambient
Junction to case
-
- 20 °C/W
-
- 5.5 °C/W
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2016.09 - Rev.A