RFUS20TM6S Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUS20TM6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
+0.3
-0.1
Applications
General rectification
+0.3
-0.1
+0.2
-0.1
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planar
(1) (2) (3)
+0.1
-0.05
Structure
(1) (2) (3)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
600
V
Reverse voltage
V_R
Direct voltage
600
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=50C
20
A
Forward current surge peak
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to 150
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
I_F=20A
V_R=600V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min.
Typ. Max. Unit
－
2.3
2.8
V
－
0.05 10
μA
－
23
35
ns
－
－
1.8 C / W
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2010.02 - Rev.A