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RFUS20TM4S Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode | |||
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Super Fast Recovery Diode
RFUS20TM4S
ï¬Series
Ultra Fast Recovery
ï¬Dimensions (Unit : mm)
+0.3
â0.1
+0.3
â0.1
+0.2
â0.1
ï¬Applications
General rectification
ï¬Structure
(1) (2) (3)
ï¬Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
ï¬Construction
+0.1
â0.05
Silicon epitaxial planer
ï¬Absolute maximum ratings (Tc=25ï°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Conditions
Dutyï£0.5
Direct voltage
Limits
Unit
430
V
430
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=68ï°C
20
A
Forward current surge peak
Junction temperature
Storage temperature
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 ï°C
100
A
Tj
150
ï°C
Tstg
-55to+150 ï°C
ï¬Electrical characteristics (Tj=25ï°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Reverse recovery time
trr
Thermal resistance
Rth(j-c)
Conditions
IF=20A
VR=430V
IF=0.5A,IR=1A,Irr=0.25ÃIR
junction to case
Min. Typ.
-
1.4
-
0.05
-
24
-
-
Max.
1.6
10
35
2
Unit
V
μA
ns
ï°C/W
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
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